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| Preliminary Data Sheet I0146J 02/02 IR155DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Wafer Size: VRRM Class: Passivation Process: Reference IR Packaged Part: Square 155 mils 4" 1600 V Glassivated MOAT 15ETS Series Major Ratings and Characteristics Parameters VFM VRRM Maximum Forward Voltage Reverse Breakdown Voltage Range Units 1100 mV 1600 V (*) Test Conditions T J = Amb., I F = 15 A TJ = Amb., I RRM = 50 A (**) (*) Wafer and die Probe test clamped at 1200V to limit arcing. 1600V BV testable only in encapsulated packages (**) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 100% Al, (20 m) 155 x 155 mils (see drawing) 100 mm, with std. < 110 > flat 330 m, 10 m 110 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination 1 IR155DM16CCB Series Preliminary Data Sheet I0146J 02/02 Ordering Information Table Device Code IR 1 155 2 D 3 M 4 16 5 C 6 CB 7 1 2 3 4 5 6 7 - International Rectifier Device Chip Dimension in Mils Type of Device: D = Wire Bondable Standard Recovery Diode Passivation Process: M = Glassivated MOAT Voltage code: Code x 100 = VRRM Metallization: C = Aluminium (Anode) - Silver (Cathode) CB = Probed Uncut Die (wafer in box) None = Probed Die in chip carrier Outline Table All dimensions are in microns (mils) 2 |
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